The new benchmark for GaN high-frequency devices

SweGaN AB today announced a new benchmark for GaN high-frequency devices based on SweGaN QuanFINE material. New ‘buffer-free’ concept for GaN-on-SiC high electron mobility transistors reveals competitive microwave performance and device efficiency. The demonstration promises commercial benefits for the entire GaN RF value chains including telecom, space, and military markets.

In a new joint study with the Chalmers University of Technology Department of Microtechnology and Nanoscience, SweGaN explored QuanFINE epitaxial wafer performance, based on GaN HEMT technology at Chalmers – Gothenburg, Sweden.

Collaborating with top scientists from the university, the team performed a new benchmark comparing the conventional 1.8 µm thick Fe-doped GaN buffer epi-structure to SweGaN’s ‘buffer-free’ QuanFINE GaN HEMT heterostructures for microwave applications. 

The study revealed that the new concept using a total GaN layer thickness of 250 nm does not compromise the material quality and device performance. Furthermore, the device results indicate that the “buffer-free” QuanFINE material can outperform conventional materials at the device level in the long run.

For SweGaN customers and manufacturers, the ultimate benefits resulting from the new “buffer-free” concept include lower trapping, better carrier confinement and lower thermal resistance – could lead to higher device power efficiency and better reliability of GaN high-frequency devices.

• Findings from the research collaboration in IEEE Electron Device Letters (Early Access), DOI: 10.1109/LED.2020.2988074, “Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility Transistors”
• Joint research team: Ding-Yuan Chen, Anna Malmros, Mattias Thorsell, Member, IEEE, Hans Hjelmgren, Olof Kordina, Jr-Tai Chen, and Niklas Rorsman, Member, IEEE.

-” The new QuanFINE concept possesses many interesting features that are very attractive for both high frequency and power electronics, says Niklas Rorsman, Research Professor at Chalmers University of Technology. As an example, the possibility of a pure AlN back-barrier will be beneficial both for good electron confinement and thermal resistance. We at Chalmers are thrilled to be part of this development in GaN HEMT Technology.”

-“Currently, GaN-on-SiC epitaxial wafers for Ka band applications are either immature or suffer from severe trade-offs, says Dr. Jr-Tai Chen, CTO at SweGaN AB. Our QuanFINE epiwafers are a highly feasible solution that can resolve issues our customers are dealing with regarding short-channel effects in the high-frequency devices.”